This program will evaluate the important parameters in the bipolar junction transistor (BJT) cross section configuration: Electron Charge, Holes Diffusion constant, Electron diffusion constant, Electron Mobility, Insintric Carrier concentration, Doping Density (npn),  Doping Density (pnp), Majority Carriers, Minority Carriers, Permitivity of Free Space, Permitivity of Silicon, Dielectric Constant, Sheet Resistance, Material's Area, Receptivity of Material, Thermal Voltage, Forward voltage, Reverse Voltage, Saturation current, Forward current, Reverse current ,  Number of Doping Atoms in the base per unit area of Emitter, Junction Built in Potential, Depletion Layer depth (P_type), Depletion Layer Depth (N_type), Maximum Electric Field, Junction Capacitance,  Capacitance Diffusion Junction. Enter NA in cm3:   Enter ND in cm3:   Enter E(mob) in cm2:   Enter L in µ meter:   Enter W in µ meter:   Enter T in µ meter:   Enter Cjo in Pico Farad:   Enter V(Forward) in Volts:   Enter V(Reverse) in Volts:   Where: NA: Doping Concentration of PNP type (1012) ND : Doping Concentration of NPN type  (1012) E(mob): Electron mobility (value= 3000 ) L: Silicon Implant Length W: Silicon Implant Width T: Silicon Implant Thickness Cjo: Junction Diffusion Capacitance  V(Forward): Forward Voltage V(Reverse): Reverse Voltage