This program will calculate the drain current ID at different VDD in the CMOS configuration. Enter Vtn in Volts:   Enter Vtp in Volts:   Enter ß(n-type) in µ A / V 2:   Enter ß(p-type) in µ A / V 2:   Enter W(n-type) in µ A / V 2:   Enter L(n-type) in µ meter:   Enter W(p-type) in µ meter:   Enter L(p-type) in µ meter:   Enter VDD(min) in Volts:   Enter VDD(max) in Volts:   Enter VDD(inc) in Volts:   Where: Vtn: NMOS threshold Voltage Vtp: PMOS threshold Voltage ß(n-type): NMOS Oxide Thickness  ß(p-type): PMOS Oxide Thickness  W(n-type): NMOS implant width  L(n-type): NMOS implant length W(p-type): PMOS implant width  L(p-type): PMOS implant length VDD(min): A value in volts to be used as a lower limit of analysis VDD(max): A value in volts to be used as an upper limit of analysis VDD(inc): A value in Volts to be used as an increment value for analysis to be performed